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Degradation of GaAs Solar Cells
Papež, Nikola ; Pinčík,, Emil (oponent) ; Lazar, Josef (oponent) ; Sobola, Dinara (vedoucí práce)
Gallium arsenide based solar cells are among the most powerful types of solar cells available. Their main advantage is excellent resistance to thermal and ionising radiation, and therefore they are used primarily in demanding conditions. This dissertation describes the state of GaAs photovoltaic cells exposed to thermal stress, high cooling, gamma radiation and broad-spectrum laser irradiation. The samples were examined before, after and during these processes using several analytical and characterisation methods. The measurements were focused on the characterisation of the surface, optical and electrical properties. Limits and new behaviour of this type of photovoltaic cells have been discovered, which are also affected by thin protective and anti-reflective layers.
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Degradation of GaAs Solar Cells
Papež, Nikola ; Pinčík,, Emil (oponent) ; Lazar, Josef (oponent) ; Sobola, Dinara (vedoucí práce)
Gallium arsenide based solar cells are among the most powerful types of solar cells available. Their main advantage is excellent resistance to thermal and ionising radiation, and therefore they are used primarily in demanding conditions. This dissertation describes the state of GaAs photovoltaic cells exposed to thermal stress, high cooling, gamma radiation and broad-spectrum laser irradiation. The samples were examined before, after and during these processes using several analytical and characterisation methods. The measurements were focused on the characterisation of the surface, optical and electrical properties. Limits and new behaviour of this type of photovoltaic cells have been discovered, which are also affected by thin protective and anti-reflective layers.
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Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs
Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel
Heteropřechody GaInP.sub.2./sub./GaAs byly pěstovány při teplotě 800.sup.o./sup.C epitaxně z kapalné faze. Růstové podmínky pro dosažení perfektní povrchové morfologie a bezdefektního růstu se nacházejí ve velice úzkém rozmezí. Byl prozkoumán růst GaAs z Bi nebo Bi-Ga taveniny na ternární vrstvě. Byl navržen nový model popisující tvorbu defektů v GaInP2 při narušení planarity podložky. Byla nalezena ostrá hranice mezi oblastí uspořádané a neuspořádané sítě dislokací v Bi:GaAs vrstvě na ternáru.
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